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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">izmertech</journal-id><journal-title-group><journal-title xml:lang="ru">Измерительная техника</journal-title><trans-title-group xml:lang="en"><trans-title>Izmeritel`naya Tekhnika</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">0368-1025</issn><issn pub-type="epub">2949-5237</issn><publisher><publisher-name>ФГУП "ВНИИФТРИ"</publisher-name></publisher></journal-meta><article-meta><article-id custom-type="elpub" pub-id-type="custom">izmertech-1435</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>НАНОМЕТРОЛОГИЯ</subject></subj-group></article-categories><title-group><article-title>Проблемы измерений размеров в микроэлектронной технологии</article-title><trans-title-group xml:lang="en"><trans-title></trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Никитин</surname><given-names>А. В.</given-names></name></name-alternatives><email xlink:type="simple">svetste47@yandex.ru</email><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff xml:lang="ru" id="aff-1"><institution>Институт искусств и информационных технологий, филиал, С.-Петербург</institution><country>Russian Federation</country></aff><pub-date pub-type="collection"><year>2012</year></pub-date><pub-date pub-type="epub"><day>07</day><month>02</month><year>2023</year></pub-date><volume>0</volume><issue>8</issue><fpage>15</fpage><lpage>20</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; ФГУП "ВНИИФТРИ", 2023</copyright-statement><copyright-year>2023</copyright-year><copyright-holder xml:lang="ru">ФГУП "ВНИИФТРИ"</copyright-holder><copyright-holder xml:lang="en">ФГУП "ВНИИФТРИ"</copyright-holder><license xlink:href="https://www.izmt.ru/jour/about/submissions#copyrightNotice" xlink:type="simple"><license-p>https://www.izmt.ru/jour/about/submissions#copyrightNotice</license-p></license></permissions><self-uri xlink:href="https://www.izmt.ru/jour/article/view/1435">https://www.izmt.ru/jour/article/view/1435</self-uri><abstract><p>Проанализированы состояние и проблемы измерений размеров в технологии изготовления микроэлектронных изделий с проектными нормами в сотни или десятки нанометров в условиях промышленного производства. Приведены аргументы о недостаточности относительных измерений и необходимости перехода к измерениям в абсолютной шкале размеров, обеспечивающим не только воспроизводимость, но и абсолютную точность результатов, что особенно актуально при освоении изделий с нанометровыми проектными нормами.</p></abstract><trans-abstract xml:lang="en"><p>In this paper the status of the size measurement methods used in process control of productions in micro-electron FAB with NODES of the nanometer rangeis analyzed and relevant problems are discussed. We made the conclusion on insufficiency of relative measurements and the need to use the measurements In absolute scale of sizes – ensuring not only the reproducibility but also the absolute accuracy of results which is especially important at producing the items with nanometer design rules.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>алгоритмы</kwd><kwd>нелинейность</kwd><kwd>калибровка увеличения</kwd><kwd>воспроизводимость и точность результатов</kwd><kwd>algorithms</kwd><kwd>non-linearity</kwd><kwd>magnification calibration</kwd><kwd>reproducibility and accuracy of results</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Макушин М.Мировой рынок микроэлектроники после кризиса: Новые реалии и старые проблемы // Электроника НТБ.2010. Вып.2.</mixed-citation><mixed-citation xml:lang="en">Макушин М.Мировой рынок микроэлектроники после кризиса: Новые реалии и старые проблемы // Электроника НТБ.2010. Вып.2.</mixed-citation></citation-alternatives></ref><ref id="cit2"><label>2</label><citation-alternatives><mixed-citation xml:lang="ru">International Technology Roadmap for Semiconductors (ITRS), SIA.</mixed-citation><mixed-citation xml:lang="en">International Technology Roadmap for Semiconductors (ITRS), SIA.</mixed-citation></citation-alternatives></ref><ref id="cit3"><label>3</label><citation-alternatives><mixed-citation xml:lang="ru">NikitinA.V.,YereminD.Y., Sandy M. The importance of accuracy in SEM metrology//Proc. SPIE.2008. V. 6922.N154.</mixed-citation><mixed-citation xml:lang="en">NikitinA.V.,YereminD.Y., Sandy M. The importance of accuracy in SEM metrology//Proc. SPIE.2008. V. 6922.N154.</mixed-citation></citation-alternatives></ref><ref id="cit4"><label>4</label><citation-alternatives><mixed-citation xml:lang="ru">Пат. 6.978.215 США.Dec.20, 2005.</mixed-citation><mixed-citation xml:lang="en">Пат. 6.978.215 США.Dec.20, 2005.</mixed-citation></citation-alternatives></ref><ref id="cit5"><label>5</label><citation-alternatives><mixed-citation xml:lang="ru">Пат. 6.969.852 США. Nov. 29,2005.</mixed-citation><mixed-citation xml:lang="en">Пат. 6.969.852 США. Nov. 29,2005.</mixed-citation></citation-alternatives></ref><ref id="cit6"><label>6</label><citation-alternatives><mixed-citation xml:lang="ru">Пат 6.807.314. США. Oct. 19, 2004.</mixed-citation><mixed-citation xml:lang="en">Пат 6.807.314. США. Oct. 19, 2004.</mixed-citation></citation-alternatives></ref><ref id="cit7"><label>7</label><citation-alternatives><mixed-citation xml:lang="ru">Пат. 6.664.532 США. Dec. 16, 2003.</mixed-citation><mixed-citation xml:lang="en">Пат. 6.664.532 США. Dec. 16, 2003.</mixed-citation></citation-alternatives></ref><ref id="cit8"><label>8</label><citation-alternatives><mixed-citation xml:lang="ru">Пат.6.573.500 США. Jun. 03,2003.</mixed-citation><mixed-citation xml:lang="en">Пат.6.573.500 США. Jun. 03,2003.</mixed-citation></citation-alternatives></ref><ref id="cit9"><label>9</label><citation-alternatives><mixed-citation xml:lang="ru">Пат. 6.878.935. США. Apr. 12, 2005.</mixed-citation><mixed-citation xml:lang="en">Пат. 6.878.935. США. Apr. 12, 2005.</mixed-citation></citation-alternatives></ref><ref id="cit10"><label>10</label><citation-alternatives><mixed-citation xml:lang="ru">Пат. 6.563.116 США. May13, 2003.</mixed-citation><mixed-citation xml:lang="en">Пат. 6.563.116 США. May13, 2003.</mixed-citation></citation-alternatives></ref><ref id="cit11"><label>11</label><citation-alternatives><mixed-citation xml:lang="ru">Никитин A. В. Использование математического моделирования для измерений наноразмеров в микроэлектронике// Измерительная техника. 2011. № 12. С. 25–29;</mixed-citation><mixed-citation xml:lang="en">Никитин A. В. Использование математического моделирования для измерений наноразмеров в микроэлектронике// Измерительная техника. 2011. № 12. С. 25–29;</mixed-citation></citation-alternatives></ref><ref id="cit12"><label>12</label><citation-alternatives><mixed-citation xml:lang="ru">Nikitin A. V. Use of mathematical modeling for measurements of nanodimensions in microelectronics //Measurement Techniques. 2011. V. 54. N 12. Р. 1346–1352.</mixed-citation><mixed-citation xml:lang="en">Nikitin A. V. Use of mathematical modeling for measurements of nanodimensions in microelectronics //Measurement Techniques. 2011. V. 54. N 12. Р. 1346–1352.</mixed-citation></citation-alternatives></ref></ref-list><fn-group><fn fn-type="conflict"><p>The authors declare that there are no conflicts of interest present.</p></fn></fn-group></back></article>
